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Wolfspeed, Inc. is engaged in developing silicon carbide and gallium nitride (GaN) technologies for power and radio-frequency (RF) applications. The Company's product families include silicon carbide and GaN materials, power devices and RF devices targeted for various applications, such as electric vehicles, fast charging, 5G, renewable energy and storage, and aerospace and defense. Its silicon carbide material products consist of silicon carbide bare wafers, epitaxial wafers, and GaN epitaxial layers on silicon carbide wafers. Its power device products consist of silicon carbide Schottky diodes, metal oxide semiconductor field effect transistors (MOSFETs) and power modules. Its RF devices consist of GaN-based die, high-electron mobility transistors (HEMTs), monolithic microwave integrated circuits (MMICs), and laterally diffused MOSFET (LDMOS) power transistors that are optimized for telecommunications infrastructure, military and other commercial applications.
| Name | Age | Since | Title |
|---|---|---|---|
| Darren R. Jackson | 57 | 2016 | Independent Chairman of the Board |
| Gregg A. Lowe | 59 | 2017 | President, CEO & Director |
| Clyde R. Hosein | 63 | 2005 | Independent Director |
| Marvin A. Riley | 47 | 2021 | Independent Director |
| Thomas H. Werner | 62 | 2006 | Independent Director |
| John B. Replogle | 56 | 2014 | Independent Director |
| John Hodge | 54 | 2018 | Independent Director |
| Duy-Loan T. Le | 59 | 2018 | Independent Director |
| Glenda M. Dorchak | 68 | 2020 | Independent Director |
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